any changing of specification will not be informed individual MMDT4401 npn plastic-encapsulate multi-chip transistor r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com elektronische bauelemente * features electrical characteristics ? tamb=25 unless otherwise specified ? power dissipation. marking : k2x p cm : 0.2 w (temp.=25 c) collector current o i cm : 0.6 a collector-base vvoltage v (br) cbo : 6 0 v operating & storage junction temperature t j ,t stg : -55 c ~ +150 c o o 01-jan-2006 rev.b page 1 of 2 parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=100a , i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 6 v collector cut-off current i cbo v cb =50 v , i e =0 0.1 a collector cut-off current i ceo v ce =35 v , i b =0 0.1 a emitter cut-off current i ebo v eb =5v , i c =0 0.1 a h fe(1) v ce =1 v, i c = 0.1ma 20 h fe(2) v ce =1 v, i c = 1ma 40 h fe(3) v ce =1 v, i c = 10ma 80 h fe(4) v ce =1 v, i c = 150ma 100 300 dc current gain h fe(5) v ce =2 v, i c = 500ma 40 v ce(sat)1 i c =150 ma, i b =15ma 0.4 v collector-emitter saturation voltage v ce(sat)2 i c =500 ma, i b =50ma 0.75 v v be(sat)1 i c = 150 ma, i b =15ma 0.75 0.95 v base-emitter saturation voltage v be(sat)2 i c = 500 ma, i b =50ma 1.2 v transition frequency f t v ce = 10v, i c = 20ma f = 100mhz 250 mhz output capacitance c ob v cb =5v, i e = 0 f=1mhz 6.5 pf delay time t d 15 ns rise time t r v cc =30v, v be =2v i c =150ma , i b1 =15ma 20 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 = i b2 = 15ma 30 ns c 2 b 1 e 1 e 2 b 2 c 1 s o t - 3 6 3 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) . 0 1 4 ( 0 . 3 5 ) . 0 0 6 ( 0 . 1 5 ) . 0 8 7 ( 2 . 2 0 ) . 0 7 9 ( 2 . 0 0 ) . 0 5 5 ( 1 . 4 0 ) . 0 4 7 ( 1 . 2 0 ) . 0 2 6 t y p ( 0 . 6 5 t y p ) . 0 9 6 ( 2 . 4 5 ) . 0 8 5 ( 2 . 1 5 ) . 0 2 1 r e f ( 0 . 5 2 5 ) r e f . 0 1 8 ( 0 . 4 6 ) . 0 1 0 ( 0 . 2 6 ) . 0 0 6 ( 0 . 1 5 ) . 0 0 3 ( 0 . 0 8 ) . 0 5 3 ( 1 . 3 5 ) . 0 4 5 ( 1 . 1 5 ) . 0 4 3 ( 1 . 1 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 3 9 ( 1 . 0 0 ) . 0 3 5 ( 0 . 9 0 ) . 0 0 4 ( 0 . 1 0 ) . 0 0 0 ( 0 . 0 0 ) 8 o o 0
http://www.secosgmbh.com elektronische bauelemente 01-jan-2006 rev.b page 2 of 2 MMDT4401 npn plastic-encapsulate multi-chip transistor any changing of specification will not be informed individual typical characteristics MMDT4401
|
